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| PD- 93809 IRF7353D2 FETKYTM MOSFET / Schottky Diode q q q q q q Co-Pack HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications N-Channel HEXFET power MOSFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K K D D VDSS = 30V RDS(on) = 0.029 Schottky VF = 0.52V 2 7 3 6 4 5 T op V ie w Description The FETKYTM family of Co-Pack HEXFET(R) Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum 6.5 5.2 52 2.0 1.3 16 20 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 9) Starting TJ = 25C, L = 10mH, RG = 25, IAS = 4.0A ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, t 10sec. Maximum 62.5 Units C/W www.irf.com 1 11/8/99 7353d2.p65 1 11/8/99, 3:01 PM IRF7353D2 MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Min. -- -- -- -- -- Typ. -- 0.023 0.032 -- 14 -- -- -- -- 22 2.6 6.4 8.1 8.9 26 18 650 320 130 Max. Units Conditions -- V V GS = 0V, ID = 250A 0.029 VGS = 10V, ID = 5.8A 0.046 VGS = 4.5V, ID = 4.7A -- V VDS = VGS, ID = 250A -- S VDS = 24V, ID = 5.8A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 55C 100 VGS = 20V nA -100 V GS = -20V 33 ID = 5.8A 3.9 nC VDS = 24V 9.6 VGS = 10V (see figure 8) 12 VDD = -5V 13 ID = 1.0A ns 39 RG = 6.0 26 R D = 15 -- VGS = 0V -- pF VDS = 25V -- = 1.0MHz (see figure 7) Conditions MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body Diode Forward Voltage trr Reverse Recovery Time (Body Diode) Qrr Reverse Recovery Charge Typ. Max. Units -- 2.5 A -- 30 0.78 1.0 V 45 68 ns 58 87 nC TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s Schottky Diode Maximum Ratings IF (av) ISM Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Max. Units 3.2 A 2.0 200 20 A Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C 50% Duty Cycle. Rectangular Wave, Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.30 mA 37 310 pF 4900 V/s Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 30V Tj = 25C Tj = 125C Vr = 5Vdc (100kHz to 1 MHz) 25C Rated Vr Irm Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com 7353d2.p65 2 11/8/99, 3:01 PM IRF7353D2 Power MOSFET Characteristics 100 TOP VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 100 TOP I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 3.0V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 V D S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 ID = 5.8A R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C T J = 150C 10 1.5 1.0 0.5 1 3.0 3.5 4.0 V D S = 10V 20s PULSE WIDTH 4.5 5.0 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 V G S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 7353d2.p65 3 11/8/99, 3:01 PM IRF7353D2 Power MOSFET Characteristics RDS (on) , Drain-to-Source On Resistance () 0.040 0.036 V G S = 4.5V RDS (on) , Drain-to-Source On Resistance () 0.12 0.10 0.08 0.032 0.06 0.028 I D = 5.8A 0.04 0.024 V G S = 10V 0.02 0.020 0 10 20 30 40 A 0.00 0 3 6 9 12 15 A I D , Drain Current (A) V G S , Gate-to-Source Voltage (V) Fig 5. Typical On-Resistance Vs. Drain Current 1200 Fig 6. Typical On-Resistance Vs. Gate Voltage 20 VGS , Gate-to-Source Voltage (V) V GS C is s C rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd ID = 5.8A VDS = 15V 16 C , Capacitance (pF) 900 C iss C oss 12 600 8 300 C rss 4 0 1 10 100 A 0 0 10 20 30 40 V D S , D rain-to-S ourc e V oltage (V ) QG , Total Gate Charge (nC) Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com 7353d2.p65 4 11/8/99, 3:01 PM IRF7353D2 Power MOSFET Characteristics 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 P DM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 I S D , Reverse Drain Current (A) T J = 150C 10 TJ = 25C 1 0.4 0.6 0.8 1.0 1.2 V G S = 0V 1.4 A 1.6 V S D , Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage www.irf.com 5 7353d2.p65 5 11/8/99, 3:01 PM IRF7353D2 Schottky Diode Characteristics 100 100 T J = 150C 10 125C 100C Reverse Current - IR (mA) 1 75C 0.1 50C 25C In sta n ta n e ou s Fo rw a rd Cu rren t - I F (A ) 10 0.01 T J = 1 50 C T J = 1 25 C T J = 2 5 C 0.001 0 5 10 15 20 25 30 A Reverse Voltage - V R (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage A llow a ble A m b ient T em pera ture - (C ) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D D D D D = 3/4 = 1/2 =1 /3 = 1/4 = 1/5 V r = 8 0 % R ated R t hJA = 6 2.5 C /W Sq uare wave DC 0.1 0.0 0.2 0.4 0.6 0.8 1.0 () Forward Voltage Drop - VF (V) Fig. 12 - Typical Forward Voltage Drop Characteristics A Av era ge F orw ard C urrent - I F(AV ) (A ) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com 7353d2.p65 6 11/8/99, 3:01 PM IRF7353D2 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 7 7353d2.p65 7 11/8/99, 3:01 PM IRF7353D2 SO-8 Tape and Reel T ER M IN A L N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E ED D IR E C TIO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ) . 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA - 5 4 1 . 3 3 0.0 0 ( 1 2 .9 9 2 ) M A X. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) N O TE S : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T ER . 2 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com 7353d2.p65 8 11/8/99, 3:01 PM |
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